M1MA152WAT1

www.DataSheet4U.com M1MA151WAT1, M1MA152WAT1 Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. Features http://onsemi.com 3 ANODE Fast trr, < 10 ns Low CD, < 15 pF Pb−Free Packages are Available 2 CATHODE 1 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA151WAT1 M1MA152WAT1 Peak Reverse Voltage M1MA151WAT1 M1MA152WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM (Note 1) IFM 225 340 500 750 mAdc 1 mAdc Mx = Device Code x = N for 151 O for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. IF 100 150 mAdc Mx M G G VRM 40 80 Vdc Symbol VR 40 80 Vdc 1 Value Unit SC−59 CASE 318D MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 −55 to + 150 Unit mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC ORDERING INFORMATION Device M1MA151WA...