LXE16350X

DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS Common emitter class AB power amplifiers for military and professional applications at 1.65 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic package, with emitter connected to flange. LXE16350X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) f (GHz) 1.65 VCE (V) 24 ICQ (A) 0.3 PL1 (W) ≥32 Gpo (dB) ≥9 Zi; ZL (Ω) see Figs 8 and 9 PINNING - SOT439A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION andbook, 4 columns 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is...