LX401

polyfet rf devices LX401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 60.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.30 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC o o -65 C to 150 C 7.0 A 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 60.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps Common Source Power Gain η Drain Efficiency 10 55 dB Idq = 0.20 A, Vds = 28.0 V, F =1,000 MHz % Idq = 0.20 A, Vds = 28.0 V, F =1,000 MHz VSWR Load Mismatch Tolerance 10:1 Relative Idq = 0.20 A, Vds = 28.0 V, F =1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Bvdss Idss Drain Breakdown Voltage Zero Bias Drain Current 65 V Ids = 25.00 mA, Vgs = 0V 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate B...