LWE2015R

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R PINNING - SOT446A PIN 1 2 3 collector base emitter DESCRIPTION APPLICATIONS Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. Marking code: 411 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 2.3 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispo...