DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2010S NPN microwave power transistor
Product specification Supersedes data of Nov...
DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2010S
NPN microwave power
transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Interdigitated structure provides high emitter efficiency Gold metallization realizes very good stability of the characteristics and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Common emitter class A power amplifiers at frequencies up to 2.3 GHz.
handbook, halfpage
LWE2010S
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION class A (CW) f (GHz) 2.3 VCE (V) 18 IC (mA) 110 PL1 (W) ≥0.8 Gpo (dB) ≥8 ZI/ZL (Ω) see Figs 6 and 7
PINNING - SOT446A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a SOT446A metal ceramic flange package, with emitter connected to flange.
1
c
3
b e
2
MAM313
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its n...