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LVE21050R

NXP
Part Number LVE21050R
Manufacturer NXP
Description NPN microwave power transistor
Published Mar 30, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of Ju...
Datasheet PDF File LVE21050R PDF File

LVE21050R
LVE21050R

Overview
DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirely ion implanted • Gold metallization ensures an optimum temperature profile with excellent performance and reliability • Input matching cell improves input impedance and allows an easier design of wideband circuits.
handbook, halfpage LVE21050R PINNING - SOT445A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION APPLICATION...


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