DatasheetsPDF.com

3SK319 Dataheets PDF



Part Number 3SK319
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Datasheet 3SK319 Datasheet3SK319 Datasheet (PDF)

3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB–”. 3SK319 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power diss.

  3SK319   3SK319



Document
3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB–”. 3SK319 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS I G1SS I G2SS VG1S(off) VG2S(off) I DS(op) |yfs| Ciss Coss Crss PG NF 6 ±6 ±6 — — 0.5 0.5 0.5 18 1.3 0.9 — 18 — Typ — — — — — 0.7 0.7 4 24 1.6 1.2 Max — — — ±100 ±100 1.0 1.0 10 32 1.9 1.5 Unit V V V nA nA V V mA mS pF pF pF dB dB VDS = 3.5V, VG2S = 3V I D = 10mA , f=900MHz Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = ±10µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = ±5V, VG2S = VDS = 0 VG2S = ±5V, VG1S = VDS = 0 VDS = 5V, VG2S = 3V, ID = 100µA VDS = 5V, VG1S = 3V, ID = 100µA VDS = 3.5V, VG1S = 1.1V, VG2S = 3V VDS = 3.5V, VG2S = 3V I D = 10mA , f=1kHz VDS = 3.5V, VG2S = 3V I D = 10mA , f= 1MHz 0.019 0.03 21 1.4 — 2.2 2 3SK319 Maximum Channel Power Dissipation Curve Pch (mW) 200 I D (mA) 20 Typical Output Characteristics VG1S = 1.7 V V G2S = 3 V 16 1.6 V 1.5 V 150 Channel Power Dissipation 12 1.4 V 1.3 V 1.2 V 100 Drain Current 8 50 4 1.1 V 1.0 V 0.9 V 0.8 V 0 50 100 150 Ta (°C) 200 0 Ambient Temperature 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current vs. Gate1 to Source Voltage 20 I D (mA) V DS = 3.5 V 20 2.5 V 2.0 V I D (mA) 16 Drain Current vs. Gate2 to Source Voltage V DS = 3.5 V 2.0 V 1.6 V 1.8 V 16 12 1.5 V 12 Drain Current 8 Drain Current 1.4 V 8 1.2 V VG1S = 1.0 V 4 VG2S = 1.0 V 0 1 2 3 Gate1 to Source Voltage 5 VG1S (V) 4 4 0 1 2 3 4 VG2S (V) 5 Gate2 to Source Voltage 3 3SK319 Forward Transfer Admittance vs. Gate1 Voltage V DS = 3.5 V VG2S = 3 V Forward Transfer Admittance |y fs | (mS) Power Gain vs. Drain Current 25 30 18 2.5 V Power Gain PG (dB) 2V 1.5 V 1V 24 20 15 12 10 V DS = 3.5 V V G2S = 3 V f = 900 MHz 5 10 15 Drain Current I D 20 (mA) 25 6 5 0 0.4 0.8 1.2 1.6 2.0 0 Gate1 to Source Voltage VG1S (V) Noise Figure vs. Drain Current 5 (dB) Power Gain PG V DS = 3.5 V V G2S = 3 V f = 900 MHz (dB) 25 Power Gain vs. Drain to Source Voltage 4 20 Noise Figure NF 3 15 2 10 V G2S = 3 V I D = 10 mA f = 900 MHz 2 4 6 Drain to Source Voltage 8 10 VDS (V) 1 5 0 5 10 15 Drain Current I D 20 (mA) 25 0 4 3SK319 Noise Figure vs. Drain to Source Voltage 5 V G2S = 3 V I D = 10 mA f = 900 MHz 25 VDS = 3.5 V f = 900MHz Power Gain vs. Gate2 to Source Voltage Noise Figure NF (dB) Power Gain PG (dB) 4 20 3 15 2 10 1 5 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 5 Noise Figure vs. Gate2 to Source Voltage VDS = 3.5 V f = 900MHz Noise Figure NF (dB) 4 3 2 1 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 5 3SK319 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –5 –4 –3 –.4 –.6 –.8 –1.5 –2 –120° –1 –90° 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 1 / div. 60° –150° –30° –60° Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 3.5 V , V G2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30° .2 Scale: 0.002 / div. 60° 150° 4 5 10 180° 0° 0 .2 .4 .6 .8 1 1.5 2 3 45 10 –10 –.2 –150° –30° –.4 –120° –60° –90° –.6 –.8 –1.5 –2 –1 –5 –4 –3 Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 3.5 V , VG2S = 3 V I D = 10mA 50 to 1000 MHz (50 MHz step) 6 3SK319 Sparameter (VDS = 3.5V, VG2S = 3V, ID = 10mA, Zo = 50Ω) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1.000 0.998 0.997 0.994 0.994 0.986 0.978 0.972 0.969 0.954 0.955 0.941 0.932 0.924 0.919 0.905 0.896 0.884 0.880 0.866 ANG –2.8 –5.8 –9.1 –12.2 –15.1 –18.5 –21.3 –24.1 –27.0 –29.7 –32.8 –35.7 –38.3 –41.3 –44.1 –46.9 –49.2 –52.4 –54.7 –57.7 S21 MAG 2.41 2.41 2.39 2.38 2.37 2.35 2.30 2.28 2.26 2.23 2.19 2.17 2.14 2.09 2.07 2.03 2.00 1.96 1.93 1.89 ANG 176.3 171.9 167.6 163.7 159.8 155.5 151.4 .


3SK318 3SK319 3SK320


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)