3SK309
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
ADE-208-472 A 2nd. Edition Features
Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Outline
CMPAK–4
2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain
3SK309
Absolute Maximu...
