Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Description
3SK300
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
ADE-208-449 1st. Edition Features
Low noise figure NF = 1.0 dB typ. at f = 200 MHz High gain PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
3SK300
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage ...
