3SK299

DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low Crss : 0.02 pF TYP. High GPS : 20 dB TYP. Low NF : 1.1 dB TYP. 4 PIN SMALL MINI MOLD PACKAGE PACKAGE DIMENSIONS in millimeters 0.3 +0.1 –0.05 0.3 +0.1 –0.05 3 4 0.3 +0.1 –0.05 0.15 +0.1 –0.05 (1.3) 1 0.9±0.1 0.3 0.4 +0.1 –0.05 VDS = 13 V, VG1S = –4 V, VG2S = 0 VDS = 5 V, VG2S = 0, VG1S = 0 VDS = 5 V, VG2S = 0 , ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 0, VG1S = –4 V, VG2S = 0 VDS = 0, VG2S = –4 V, VG1S = 0 VDS = 5 V, VG2S = 1 V, ID = 10 mA f = 1.0 kHz VDS = 5 V, VG2S = 1 V, ID = 10 mA f = 1 MHz VDS = 5 V, VG2S = 1 V, ID = 10 mA f = 900 MHz 0 to 0.1 1. Source 2. Drain 3. Gate 2 4. Gate 1 2.1±0.2 1.25±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 13 –4.5 –4.5 40 120 125 –55 to +125 V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain Current Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL IDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS |yfs| 18 25 5 20 MIN. TYP. MAX. 10 40 –3.5 –3.5 10 10 35 UNIT TEST CONDITIONS Input Capacitance Reverse Transfer Ca...