3SK298

3SK298 Silicon N-Channel Dual Gate MOS FET ADE-208-390 1st. Edition Application UHF / VHF RF amplifier Features Low noise figure. NF = 1.0 dB typ. at f = 200 MHz Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK298 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 — — 0.5 0 0 16 2.4 0.8 — 22 — 12 — — Typ — — — — — — — — 20 2.9 1.0 0.023 25 1.0 15 3.2 2.8 Max — — — ±100 ±100 10 +1.0 +1.0 — 3.4 1.4 0.04 — 1.8 — 4.5 3.5 Unit V V V nA nA mA V V mS pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 60 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 200 MHz Test conditions I D = 200 µA , VG1S = –3 V, VG2S = –3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 ...