3SK296

3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 — — 0.5 –0.5 0 16 1.2 0.6 — 16 — Typ — — — — — — — — 20.8 1.5 0.9 0.01 19.5 2.0 Max — — — ±100 ±100 10 +0.5 +1.0 — 2.2 1.2 0.03 — 3 Unit V V V nA nA mA V V mS pF pF pF dB dB VDS = 4 V, VG2S = 3V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA , VG1S = –3 V, VG2S = –3 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 6 V, VG1S = 0.5V, VG2S = 3 V VDS = 10 V, VG2S = 3V, I D = 100 µA VDS = 10 V, VG1S = 3V, I D = 100 µA VDS = 6...