3SK252

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low VDD Use Driving Battery 0.1 0.4 + – 0.05 : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.2 2.8 + – 0.3 0.2 1.5 + – 0.1 0.1 0.4 + – 0.05 Low Noise Figure : High Power Gain : 2 Suitable for use as RF amplifier in CATV tuner. 2.9 ± 0.2 (1.8) 0.95 Automatically Mounting : Package : Embossed Type Taping 4 Pins Mini Mold 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1: RL ≥ 10 kΩ *2: Free air VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg 18 ± 8*1 ± 8*1 18 18 25 200*2 125 –55 to +125 V V V V V mA mW °C °C 0.85 1 4 0.1 0.6 + – 0.05 5˚ 5˚ 0.2 1.1 + – 0.1 0.8 0.1 0.4 + – 0.05 5˚ 0~0.1 5˚ PIN CONNECTIONS 1. 2. 3. 4. Source Drain Gate2 Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10582EJ2V0DS00 (2nd edition) (Previous No. TD-2373) Date Published August 1995 P Printed in Japan © 0.1 0.16 + – 0.05 (1.9) 1993 3SK252 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Volta...