TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK249
3SK249
TV Tuner, UHF RF Amplifier Applicat...
TOSHIBA Field Effect
Transistor Silicon N Channel Dual Gate MOS Type
3SK249
3SK249
TV Tuner, UHF RF Amplifier Applications
Unit: mm
Superior cross modulation performance. Low reverse transfer capacitance: Crss = 20 fF (typ.) Low noise figure.: NF = 1.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
VDS VG1S VG2S
ID PD Tch Tstg
12.5 ±8 ±8 30 100 125 −55~125
V V V mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2K1B
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Gate 1 leakage current Gate 2 leakage current
Drain-source voltage
Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance Reverse tr...