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3SK199

Silicon N Channel Dual Gate MOS Type FET

Description

3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltag...

Toshiba Semiconductor

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