3SK194

3SK194 Silicon N-Channel Dual Gate MOS FET Application VHF/UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK194 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 15 ±10 ±10 35 150 125 –55 to +125 Unit V V V mA mW °C °C 2 3SK194 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Symbol V(BR)DSX V(BR)G1SS V(BR)G2SS I G1SS I G2SS Min 15 ±10 ±10 — — — — 0 17 — — — 12 — — 27 — Typ — — — — — — — — — 2.8 1.8 0.02 15 3.0 3.0 30 1.0 Max — — — ±100 ±100 –1.0 –1.5 10 — 3.5 2.5 — — 4.5 4.0 — 2.5 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB dB VDD = 12 V, VAGC = 10.5 V, f = 60 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA, VG1S = VG2S = –5 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, V G2S = VDS = 0 VG2S = ±8 V, V G1S = VDS = 0 VDS = 10 V, VG2S = 3 V, I D = 100 µA VDS = 10 V, VG1S = 3 V, I D = 100 µA VDS = 6 V, VG1S = 0, VG2S = 3 V VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 1 MHz Gate 1 to source cutoff voltage VG1S(off) Gate 2 to source cutoff voltage VG2S(o...