3N171

3N170 3N171 Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Gate Drain to Source Gate to Source ±35V 25V ±35V 30mA * Body tied to Case. 300mW -65 to +150 °C -55 to +135 °C 1 N-CHANNEL MOSFET ENHANCEMENT MODE rds(on) ≤ 200Ω td(on) ≤ 3.0ns TO-72 BOTTOM VIEW G 2 3 D S 1 4 C ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS VDS(on) VGS(th) IGSS IDSS ID(on) gfs rds(on) Crss Ciss Cdb CHARACTERISTIC Drain to Source Breakdown Voltage Drain to Source "On" Voltage Gate to Source Threshold Voltage Gate Leakage Current Drain Leakage Current "Off" Drain Current "On" Forward Transconductance Drain to Source "On" Resistance Reverse Transfer Capacitance Input Capacitance Drain to Body Capacitance 10 1000 200 1.3 5.0 5.0 pF 3N170 3N171 1.0 1.5 MIN 25 2.0 2.0 2.0 10 10 pA nA mA µS Ω V TYP MAX UNITS CONDITIONS ID = 10µA, VGS = 0V ID = 10mA, VGS = 10V VDS = 10V, ID = 10µA VGS = -35V, VDS = 0V VDS = 10V, VGS = 0V VGS = 10V, VDS = 10V VDS = 10V, ID = 2.0mA, f = 1.0kHz VGS = 10V, ID = 0A, f = 1.0kHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 10V, VGS = 0V, f = 1.0MHz VDB = 10V, f = 1.0MHz Linear Integrated Systems 40...