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3N166

Linear Integrated Systems
Part Number 3N166
Manufacturer Linear Integrated Systems
Description MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Published Mar 30, 2005
Detailed Description 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN...
Datasheet PDF File 3N166 PDF File

3N166
3N166

Overview
3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltage (NOTE 3) Gate-Gate Voltage Drain Current (NOTE 2) Storage Temperature Operating Temperature Lead Temperature (Soldering, 10 sec.
) Power Dissipation (One Side) Total Derating above 25°C 40 V 30 V ±125 V ±80 V 50 mA -65°C to +200°C -55°C to +150°C +300°C 300 mW 4.
2 mW/°C ENHANCEMENT MODE MOSFET 1 7 C G1 G2 D2 S 3 5 D1 8 4 Device Schematic TO-99 Bottom View ELECTRICAL CHARACTERISTICS (TA=2...


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