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3N166

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

Description

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION Very High Impedance High Gate Breakdown Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . ...

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