TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK881
FM Tuner Applications VHF Band Amplifier Applicat...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK881
FM Tuner Applications VHF Band Amplifier Applications
2SK881
Unit: mm
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 9 mS (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDO IG PD Tj Tstg
−18 10 100 125 −55~125
V mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure
IGSS
VGS = −0.5 V, VDS = 0
V (BR) GDO IG = −10 μA
IDSS (Note)
VGS ...