2SK663

Silicon Junction FETs (Small Signal) 2SK663 Silicon N-Channel Junction FET For low-frequency amplification For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q Low noise-figure (NF) q High gate to drain voltage VGDO q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 0.9±0.1 0 to 0.1 Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 30 10 150 125 −55 to +125 Unit V V V mA mA mW °C °C 0.7±0.1 s Absolute Maximum Ratings (Ta = 25°C) 0.2±0.1 1: Source 2: Drain 3: Gate EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol (Example): 2B s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDS VGSC gm Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = 100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz 2.5 7.5 6.5 1.9 2.5 55 80 −5 min 1 typ max 12 −10 Unit mA nA V V mS pF pF dB Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF * IDSS rank classification Runk IDSS (mA) P 1 to 3 2BP Q 2 to 6...