2SK536

Ordering number:EN2550 N-Channel Enhancement MOS Silicon FET 2SK536 Analog Switch Applications Features · Large yfs. · Enhancement type. · Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain-to-Source ON Resistance Symbol Conditions V(BR)DS IGSS IDSS IGS(off) | yfs | Ciss Coss Crss RDS(on) ID=10µA, VGS=0 VGS=10V, VDS=0 VDS=20V, VGS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA, f=1kHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VGS=10V, ID=10mA 0.8 1.1 1 : Gate 2 : Drain 3 : Source SANYO : CP Ratings 50 ±12 100 300 200 125 –55 to +125 Unit V V mA mA mW ˚C ˚C Ratings min typ 50 0.01 0.3 0.9 25 40 15 6 0.5 20 max 10 1 1.5 Unit V nA µA V mS pF pF pF Ω Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft...