2SK436

Ordering number:EN1405B N-Channel Junction Silicon FET 2SK436 High-Frequency, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · AM tuner RF amplifiers and low-noise amplifiers. unit:mm Features · Largeyfs. · Ultralow noise figure. · Small Crss. · Ultrasmall-sized package permitting 2SK436-applied sets to be made small and slim. 2050A 0.4 3 [2SK436] 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg 1 0.95 0.95 2 1.9 2.9 Conditions 0.8 1.1 1 : Source 2 : Drain 3 : Gate SANYO : CP Ratings 15 –15 10 20 150 125 –55 to +125 Unit V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance V(BR)GDS IGSS IDSS* VGS(off) | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure NF * : The 2SK436 is classified by IDSS as follows : (unit : mA) Note) Marking : A IDSS rank : 17, 18, 19, 20, 21, 22 IG=–10µA, VDS=0 VGS=–10V, VDS=0 VDS=5V, VGS=0 VDS=5V, ID=100µA VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, ID=1mA, Rg=1kΩ, f=1kHz 1.2 17 2.1 1.7 18 3.0 2.5 3.5 20 6.0 5.0 21 8.5 7.3 19 4.2 22 12.0 ...