2SK367

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = −100 V (min) High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −100 10 200 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-4E1B Weight: 0.13 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = −80 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100...