2SK365

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA ¾ -50 IDSS (Note 1) VDS = 10 V, VGS = 0 1.2 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA -0.25 VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0 VDS = 10 V, VGS = 0, f = 1 MHz ¾ Crss RDS (ON) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 mV, VGS = 0 (Note 2) ¾ ¾ ¾ ¾ ¾ ¾ 19 13 3 80 -1.0 ¾ 14 -1.5 ¾ ¾ ¾ ¾ nA V mA V mS pF pF W Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA Note 2: Condition of the typical value IDSS = 5 mA 1 2003-03-26 2SK365 2 2003-03-26 2SK365 3 2003-03-26 ...