2SK360

2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = –4 V Symbol VDSX* VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 150 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Grade Mark I DSS D IGD 4 to 8 E IGE 6 to 10 Symbol V(BR)DSX I GSS I DSS* 1 Min 20 — 4 0 8 — — — — — F IGF 8 to 12 Typ — — — — 14 2.5 1.6 0.03 30 2.0 Max — ±20 12 –2.0 — — — — — — Unit V nA mA V mS pF pF pF dB dB Test conditions I D = 100 µA, VGS = –4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Coss Crss PG NF VDS = 10 V, VGS = 0, f = 100 MHz 1. The 2SK360 is grouped by I DSS as follows. See characteristic curves of 2SK359. 2 2SK360 Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3...