2SK3475

2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) · · · Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 ±5 1 3 150 −45~150 Unit V V A W °C °C Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC JEITA TOSHIBA ― SC-62 2-5K1D Marking Type name W B 1 2 3 1. Gate 2. Source 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2002-01-09 2SK3475 Electrical Characteristics (Ta = 25°C) Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 208 mA VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, VDS = 6.0 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, Min ¾ ¾ 1.9 ¾ ¾ ¾ ¾ 630 45 14.9 500 Typ. ¾ ¾ 2.4 87 260 11 12.5 ¾ ¾ ¾ ¾ Max 5 5 2.9 ¾ ¾ ...