2SK3462

2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switching Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 3 6 20 36.2 3 2 150 −55~150 A Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC W mJ A mJ °C °C ― SC-64 2-7B1B JEITA TOSHIBA Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability ...