2SK3397

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: Yfs = 110 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 125 273 70 12.5 150 −55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit °C/W Circuit Configuration 4 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 40 µH, IAR = 70 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-02-27 2SK3397 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Drain cut-OFF cu...