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2SK3396

Panasonic Semiconductor
Part Number 2SK3396
Manufacturer Panasonic Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low f...
Datasheet PDF File 2SK3396 PDF File

2SK3396
2SK3396

Overview
Silicon Junction FETs (Small Signal) 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , reverse transfer capacitance (common source) Crss 0.
33+0.
05 –0.
02 3 0.
10+0.
05 –0.
02 (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5° 0.
15 min.
0.
23+0.
05 –0.
02 1 2 0 to 0.
01 Parameter Gate-drain voltage (Source open) Gate-source voltage (Drain open) Gate current Drain current Power dissipation Channel temperature Storage temperature Symbol VGDO VGSO IG ID PD...


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