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2SK3390

Hitachi Semiconductor
Part Number 2SK3390
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features • High power outpu...
Datasheet PDF File 2SK3390 PDF File

2SK3390
2SK3390

Overview
2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st.
Edition Aug.
2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.
31 W, ηadd= 60 % min.
(f = 836 MHz) • Compact package capable of surface mounting Outline RP8P D 3 1 G 2 S 2 1 3 1.
Gate 2.
Source 3.
Drain Note: Marking is “IX”.
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
2SK3390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1.
PW < 1sec, Tch < 150 °C 2.
Value at Tc = 25°C Symbol VDSS V...


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