2SK3367

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A) RDS(on)3 = 14.0 mΩ MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 2800 pF TYP. Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3367 2SK3367-Z PACKAGE TO-251 TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±36 ±144 40 1.0 150 –55 to + 150 V V A A W W °C °C Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 3.13 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14257EJ1V0DS00 (1st edition) Date Published October 1999 NS CP(K) Printed in Japan © 1999 2SK3367 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS...