2SK3361

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3361 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3361 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3361 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A) 5 Low Ciss: Ciss = 4900 pF TYP. Built-in gate protection diode Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 100 ±20 +20, –10 ±40 ±160 35 2.0 150 –55 to +150 40 160 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.57 62.5 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14319EJ1...