2SK3360

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3360 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3360 is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-state resistance 5 5 5 RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 3200 pF TYP. Built-in gate protection diode Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage 5 5 Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 100 ±20 +20, –10 ±35 ±140 35 2.0 150 –55 to +150 35 122 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 V THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 3.57 62.5 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document N...