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2SK3349

Hitachi Semiconductor
Part Number 2SK3349
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.Edition. June 1999 Features • Low on-resista...
Datasheet PDF File 2SK3349 PDF File

2SK3349
2SK3349


Overview
2SK3349 Silicon N Channel MOS FET High Speed Switching ADE-208-804 (Z) 1st.
Edition.
June 1999 Features • Low on-resistance R DS = 2.
8 Ω typ.
(at VGS = 4 V , ID = 25 mA) R DS = 4.
8 Ω typ.
(at VGS = 2.
5 V , I D = 10 mA) • 2.
5 V gate drive device • Small package (SMPAK) Outline SMPAK 3 1 2 D G 1.
Source 2.
Gate 3.
Drain S 2SK3349 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 20 ±10 50 200 50 100 150 –55 to +150 Unit V V mA mA mA mW °C °C 1...



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