DatasheetsPDF.com

2SK330

Part Number	2SK330
Manufacturer	Toshiba Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Curr...
Datasheet	2SK330 PDF File

Overview

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK330 Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 320 Ω (typ.
) (IDSS = 5 mA) • Complementary to 2SJ105 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of JEDEC ― ...

Similar Datasheet

2SK300 N-Channel Silicon MOSFET - Sony Corporation
2SK3000 Silicon N Channel MOS FET - Hitachi Semiconductor
2SK3000 Silicon N Channel MOS FET - Renesas Technology
2SK3001 GaAs HEMT Low Noise Amplifier - Hitachi Semiconductor
2SK3003 MOSFET - Sanken
2SK3003 N-Channel MOSFET - INCHANGE
2SK3004 MOSFET - ETC
2SK3004 N-Channel MOSFET - INCHANGE
2SK3009 VX-2 Series Power MOSFET - Shindengen Electric Mfg.Co.Ltd
2SK301 N-Channel MOSFET - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)