DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK32...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3299
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3299 2SK3299-S 2SK3299-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) Gate voltage rating ±30 V Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 ±30 ±10 ±40 1.5 75 150 −55 to +150 10 66.7
V V A A W W °C °C A mJ
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2
IAS EAS
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
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