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2SK3288

N-Channel MOSFET

Description

2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 (Z) 1st.Edition. June 1999 Features Low on-resistance R DS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) 4 V gate drive device. Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3288 Absolute Maximum Ratings (Ta = 25°C...

Hitachi Semiconductor

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