N-Channel MOSFET
Power MOSFETs
2SK3269
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Qg • High avalanche resista...
Description
Power MOSFETs
2SK3269
N-channel enhancement mode MOSFET
■ Features
Low on-resistance, low Qg High avalanche resistance
(1.4)
Unit: mm
10.5±0.3 4.6±0.2 1.4±0.1
0.6±0.1
3.0±0.5 0 to 0.5
For PDP For high-speed switching
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
0 to 0.3
■ Absolute Maximum Ratings TC = 25°C
1 2 3
(10.2) (8.9)
(6.4) (1.4)
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Note) *: L = 0.2 mH, IL = 15 A, 1 pulse
Symbol VDSS VGSS ID IDP EAS PD Tch Tstg
Rating 100 ±20 ±25 ±100 22.5 40 1.4 150 −55 to +150
Unit V V A A mJ W
(2.1)
1: Gate 2: Drain 3: Source TO-220C-G1 Package
Marking Symbol: K3269
°C °C
Internal Connection
D
G
S
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Drain-source surrender voltage Gate threshold voltage Drain-source cutoff current Gate-source cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time
Publication date: March 2004
Symbol VDSS Vth IDSS IGSS RDS(on) Yfs Ciss Coss Crss td(on) Tr td(off) tf
Conditions ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 80 V, VGS = 0 VGS = ±20 V, VDS = 0 VGS = 10 V, ID = 12 A VDS = 10 V, ID = 12 A VDS = 10 V, ...
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