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2SK3229

Hitachi Semiconductor
Part Number 2SK3229
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st. Edition December ...
Datasheet PDF File 2SK3229 PDF File

2SK3229
2SK3229

Overview
2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.
Edition December 1998 Features • Low on-resistance R DS(on) =6mΩ typ.
• Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 80 ±20 60 240 60 50 181 35 150 –55 to +150 Unit V V A A A A...


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