Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
• Avalanche energy capability guarantee...
Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
21.0±0.5
φ 3.2±0.1
15.0±0.2
■ Applications
PDP Switching mode
regulator
16.2±0.5 (3.2) (2.3) Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 ±30 ±30 ±120 925 100 3 150 −55 to +150 °C °C Unit V V A A mJ W
5.45±0.3 10.9±0.5 1 2 3
1: Gate 2: Drain 3: Source EIAJ: SC-92 TOP-3F-B1 Package
Marking Symbol: K3192 Internal Connection
D
Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C
G
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tf VDD = 100 V, ID = 15 A, RL = 6.7 Ω VGS = 10 V Conditions ID = 1 mA, ...