2SK3176

2SK3176 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V) 2SK3176 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 200 200 ±20 30 120 150 925 30 15 150 −55 to 150 V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.66 mH, RG = 25 Ω, IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature. Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (...