2SK3161S

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS = 90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3161(L),2SK3161(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 — — 1.0 — — 16 — — — — — — — — — Typ — — — — — 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max — — ±10 10 2.5 115 125 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to ...