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2SK3159

Hitachi Semiconductor
Part Number 2SK3159
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st. Edition February...
Datasheet PDF File 2SK3159 PDF File

2SK3159
2SK3159

Overview
2SK3159 Silicon N Channel MOS FET High Speed Power Switching ADE-208-774 (Z) Target Specification 1st.
Edition February 1999 Features • Low on-resistance R DS = 23 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1.
Gate 2.
Drain (Flange) 3.
Source 2SK3159 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 50 200 50 50 187 125 150 –55...


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