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2SK3155 Dataheets PDF



Part Number 2SK3155
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK3155 Datasheet2SK3155 Datasheet (PDF)

2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3155 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Cha.

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2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th. Edition Februaty 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3155 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 15 60 15 15 16 30 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 — — 1.0 — — 8.5 — — — — — — — — — Typ — — — — — 0.10 0.12 14 850 300 160 13 100 195 110 0.9 140 Max — — ±10 10 2.5 0.13 0.15 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK3155 Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) 500 200 100 50 20 10 5 2 1 0.5 0.2 0.1 PW = Maximum Safe Operation Area 30 Channel Dissipation Drain Current 20 D C (T 10 1 10 0 µ 0 s µs ho t) m 1 s( s m 1s O c pe = ra 10 Operation in this area is limited by R DS(on) Ta = 25°C 0.3 1 3 25 n °C ) tio 0 50 100 150 Tc (°C) 200 0.05 0.1 10 30 100 300 1000 Case Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V I D (A) 16 5V 4V 3.5 V (A) 16 20 Pulse Test Typical Transfer Characteristics V DS = 10 V Pulse Test 12 3V ID Drain Current 12 Drain Current 8 8 75°C 25°C Tc = –25°C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 4 0 3 2SK3155 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 5 Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 VGS = 4 V 0.1 10 V 4 3 2 I D = 15 A 10 A 5A 0.05 1 0.02 0.01 0.1 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.3 1 3 Drain Current 10 30 I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 5A 0.3 I D = 10 A Forward Transfer Admittance vs. Drain Current 1000 300 100 30 75 °C 1 0.3 0.1 0.1 0.2 0.5 1 2 5 Tc = –25 °C 25 °C 0.2 V GS = 4 V 0.1 10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 10 A 5A V DS = 10 V Pulse Test 10 20 50 100 Drain Current I D (A) 4 2SK3155 Body–Drain Diode Reverse Recovery Time 10000 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 3000 1000 300 100 30 10 10 20 I DR (A) 5 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Coss Crss 10 5 0.1 0.2 0.5 1 2 Reverse Drain Current VGS = 0 f = 1 MHz Ciss Typical Capacitance vs. Drain to Source Voltage 500 Reverse Recovery Time trr (ns) 200 100 50 20 Dynamic Input Characteristics V DS (V) V GS (V) 200 I D = 15A V DD = 100 V 50 V 25 V V GS 20 Capacitance C (pF) 1000 500 Switching Time t (ns) Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % t d(off) 160 16 200 100 50 20 10 5 0.1 0.2 2 0.5 1 Drain Current 5 I D (A) 10 20 tf tr t d(on) Drain to Source Voltage 120 V DS 12 80 8 40 VDD = 100 V 50 V 25 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 Gate to Source Voltage 5 2SK3155 Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy E AR (mJ) 20 Reverse Drain Current I DR (A) 20 I AP = 15 A V DD = 50 V duty < 0.1 % Rg > 50 Ω Maximun Avalanche Energy vs. Channel Temperature Derating 16 16 12 10 V 8 5V V GS = 0, –5 V 12 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS .


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