2SK3151
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-747A (Z) 2nd. Edition February 1999 Features
Low on-resistance R DS (on) = 11.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D 2
1 G
1
3 S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK3151
Absolute Maximum Ratings (Ta = 25°C)
I...
