2SK3147

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features Low on-resistance R DS = 0.1 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 5 20 5 5 2.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 3.5 — — — — — — — — — Typ — — — — — 0.1 0.13 6 420 185 100 10 35 110 60 0.85 85 Max — — ±10 10 2.5 0.13 0.18 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 3 A, VGS = 10 VNote4 I D = 3 A, VGS = 4 V Note4 I D = 3 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 3 A, VGS = 10 V RL = 10 Ω Drain to source breakdown voltage V(BR)DSS Gate to sour...