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2SK3140 Dataheets PDF



Part Number 2SK3140
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3140 Datasheet2SK3140 Datasheet (PDF)

2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Ch.

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2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Pch Note 2 Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω 2 2SK3140 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 — — 1.0 — — |yfs| Ciss Coss 45 — — — — — — — — — — — — Typ — — — — 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 30 A, VGS = 10 V Note 1 I D = 30 A, VGS = 4 V Note 1 I D = 30 A, VDS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V I D = 60 A VGS = 10 V, ID = 30 A RL = 1Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 3 2SK3140 Main Characteristics Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area 1000 I D (A) 300 100 30 10 3 1 0.3 DC Op 30 PW er ati 10 = 10 (T 10 0µ µs s 1m m s( s sh ot ) Channel Dissipation Drain Current 20 on 1 10 Operation in this area is limited by R DS(on) Ta = 25°C c= ) 25 °C 0 50 100 150 Tc (°C) 200 Case Temperature 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V 5V 4V 100 Pulse Test (A) I D (A) 80 3.5 V 80 V DS = 10 V Pulse Test 60 ID Drain Current 60 Drain Current 40 3V 20 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 40 25°C 75°C Tc = –25°C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 20 4 2SK3140 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (mΩ ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 1.6 1.2 20 10 5 VGS = 4 V 10 V 0.8 0.4 10 A 0 I D = 50 A 20 A 16 20 V GS (V) 2 1 12 4 8 Gate to Source Voltage 1 2 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (mΩ ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 50 A 12 4V 10, 20, 50 A VGS = 10 V 10 A 20 A Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C 75 °C Tc = –25 °C V DS = 10 V Pulse Test 8 4 0 –50 0 50 100 150 200 Case Temperature Tc (°C) 5 2SK3140 Body–Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 10000 Ciss Typical Capacitance vs. Drain to Source Voltage 3000 1000 Coss di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 300 100 0 Crss 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V CE (V) V GE (V) 100 I D = 60 A V GS VDD = 50 V 25 V 10 V 20 1000 500 Switching Time t (ns) Switching Characteristics t d(off) 80 16 Collector to Emitter Voltage 60 V DS 40 12 Gate to Emitter Voltage 200 100 50 20 tf tr t d(on) 8 20 VDD = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 50 100 0 10 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A) 6 2SK3140 Reverse Drain Current vs. Source to Drain Voltage 100 (A) 10 V 80 Reverse Drain Current I F 5V Repetitive Avalanche Energy E AR (mJ) 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating 200 60 V GS = 0, –5 V 40 150 100 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 0 25 Source to Drain Voltage V SDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Wavefor.


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