Document
2SK3140
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-767C (Z) 4th. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK3140
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR
Note 3 Note 3 Note 1
Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
Pch Note 2 Tch Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK3140
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS I GSS I DSS Min 60 — — 1.0 — — |yfs| Ciss Coss 45 — — — — — — — — — — — — Typ — — — — 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns I F = 60 A, VGS = 0 I F = 60 A, VGS = 0 diF/ dt = 50 A/ µs Test Conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1 mA, VDS = 10 V Note 1 I D = 30 A, VGS = 10 V Note 1 I D = 30 A, VGS = 4 V Note 1 I D = 30 A, VDS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V I D = 60 A VGS = 10 V, ID = 30 A RL = 1Ω
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance
Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1. Pulse test Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr
3
2SK3140
Main Characteristics
Power vs. Temperature Derating 40
Pch (W)
Maximum Safe Operation Area 1000
I D (A)
300 100 30 10 3 1 0.3
DC Op
30
PW
er ati
10
= 10
(T
10
0µ
µs
s
1m
m s(
s
sh ot
)
Channel Dissipation
Drain Current
20
on
1
10
Operation in this area is limited by R DS(on) Ta = 25°C
c=
)
25
°C
0
50
100
150 Tc (°C)
200
Case Temperature
0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)
Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V 5V 4V 100 Pulse Test
(A)
I D (A)
80
3.5 V
80
V DS = 10 V Pulse Test
60
ID Drain Current
60
Drain Current
40 3V 20 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
40 25°C 75°C Tc = –25°C 0 1 2 3 Gate to Source Voltage 4 5 V GS (V)
20
4
2SK3140
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (mΩ ) 2.0 Static Drain to Source on State Resistance vs. Drain Current
100
Pulse Test
50
1.6
1.2
20 10 5
VGS = 4 V 10 V
0.8
0.4 10 A 0
I D = 50 A 20 A 16 20 V GS (V)
2 1
12 4 8 Gate to Source Voltage
1
2
5 10 20 50 100 200 Drain Current I D (A)
Static Drain to Source on State Resistance R DS(on) (mΩ )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 50 A 12 4V 10, 20, 50 A VGS = 10 V 10 A 20 A
Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 25 °C 75 °C Tc = –25 °C V DS = 10 V Pulse Test
8
4 0 –50
0 50 100 150 200 Case Temperature Tc (°C)
5
2SK3140
Body–Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 30000 VGS = 0 f = 1 MHz Capacitance C (pF) 10000 Ciss Typical Capacitance vs. Drain to Source Voltage
3000 1000
Coss
di / dt = 50 A / µs V GS = 0, Ta = 25 °C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A)
300 100 0
Crss
10
20
30
40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V CE (V) V GE (V) 100 I D = 60 A V GS VDD = 50 V 25 V 10 V 20
1000 500 Switching Time t (ns)
Switching Characteristics t d(off)
80
16
Collector to Emitter Voltage
60 V DS 40
12
Gate to Emitter Voltage
200 100 50 20
tf tr t d(on)
8
20
VDD = 50 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc)
4 0 400
V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 50 100
0
10 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A)
6
2SK3140
Reverse Drain Current vs. Source to Drain Voltage 100 (A) 10 V 80 Reverse Drain Current I F 5V Repetitive Avalanche Energy E AR (mJ) 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating
200
60 V GS = 0, –5 V 40
150
100
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
50 0 25
Source to Drain Voltage
V SDF (V)
50 75 100 125 150 Channel Temperature Tch (°C)
Avalanche Test Circuit EAR =
Avalanche Wavefor.