2SK3126
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3126
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = ...
