N-Channel MOSFET
Ordering number:ENN6105A
N-Channel Silicon MOSFET
2SK3122
Ultrahigh-Speed Switching Applications
Features
· Low ON res...
Description
Ordering number:ENN6105A
N-Channel Silicon MOSFET
2SK3122
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
Package Dimensions
unit:mm 2062A
[2SK3122]
4.5 1.6 1.5
0.4 3 1.5 2 3.0 0.75
0.5 1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on a ceramic board (250mm2×0.8mm)
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings 30 ±24 3 12 3.5 1.5 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=500mA, VGS=4V Conditions Ratings min 30 10 ±10 1.0 1.7 2.5 115 230 150 320 2.4 typ max Unit V µA µA V S mΩ mΩ
Marking : KW
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s contro...
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